? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c ( chip capabitlty) 180 a i lrms leads current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 720 a i a t c = 25 c 180 a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting force (plus247) 20..120/4.5..27 n/lb. mountingtorque (to-264) 1.13/10 nm/lb.in. weight plus247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 100 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 8 m hiperfet tm power mosfets single mosfet die ixfk180n10 IXFX180N10 v dss = 100v i d25 = 180a r ds(on) 8m g = gate d = drain s = source tab = drain (tab) g d s to-264 (ixfk) plus247 (ixfx) (tab) ds98552d(02/09) n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z high current handling capability z avalanche rated z low r ds(on) hdmos tm process z fast intrinsic diode z low package inductance advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z temperature and lighting controls
ixfk180n10 IXFX180N10 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 45 76 s c iss 10.90 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 3.55 nf c rss 1.94 nf t d(on) 50 ns t r 90 ns t d(off) 140 ns t f 65 ns q g(on) 390 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 195 nc r thjc 0.22 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 180 a i sm repetitive, pulse width limited by t jm 720 a v sd i f = 100a, v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.1 c i rm 13 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 90a, -di/dt = 100a/ s v r = 50v, v gs = 0v terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline to-264 (ixfk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2009 ixys corporation, all rights reserved ixfk180n10 IXFX180N10 ixys ref: f_180n10(9x)2-24-09-b fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 90a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 180a i d = 90a fig. 5. r ds(on) normalized to i d = 90a value vs. drain current 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0 30 60 90 120 150 180 210 240 270 300 330 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixfk180n10 IXFX180N10 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 275 300 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = - 40oc 25oc 125oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0 50 100 150 200 250 300 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 50v i d = 90a i g = 10ma fig. 11. capacitance 1 10 100 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved ixys ref: f_180n10(9x)2-24-09-b ixfk180n10 IXFX180N10 fig. 13. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms external lead limit fig. 14. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
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